Ultra-high mobility electron gas
Context: Scientists have produced electron gas with ultra-high mobility, which can speed up transfer of quantum information and signal from one part of a device to another and increase data storage and memory.
- Ultra-high mobility electron gas can increase information transfer speed &data storage density in quantum devices.
- The need for attaining new functionalities in modern electronic devices has led to the manipulation of property of an electron called spin degree of freedom along with its charge.
- This has given rise to an altogether new field of spin-electronics or ‘spintronics’.
- It has been realized that a phenomenon called the ‘Rashba effect’, which consists of splitting of spin-bands in an electronic system, might play a key role in spintronic devices.
- The Rashba effect, also called Bychkov–Rashba effect, is a momentum-dependent splitting of spin bands in bulk crystals and low-dimensional condensed matter systems (such as heterostructures and surface states) similar to the splitting of particles and anti-particles in the Dirac Hamiltonian.
- In the ultra-high mobility 2d-electron gas (2DEG) due to the high mobility of the electron gas, electrons do not collide inside the medium for a long distance and hence do not lose the memory and information.
- Hence, such a system can easily remember and transfer its memory for a long time and distance.
- In addition, since they collide less during their flow, their resistance is very low, and hence they don’t dissipate energy as heat.
- So, such devices do not heat up easily and need less input energy to operate.
1.png)
